PART |
Description |
Maker |
K7R640982M K7R643682M K7R641882M |
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7J643682M07 K7J641882M |
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
K7N641845M K7N641845M-FC16 K7N641845M-FC25 K7N6418 |
2Mx36 & 4Mx18 Pipelined NtRAM
|
Samsung semiconductor
|
UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
K7R320982M K7R321882 K7R321882M K7R323682 K7R32368 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 1Mx36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7Q161852A |
512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
K7Q163664B10 K7Q161864B |
512Kx36 & 1Mx18 QDRTM b4 SRAM
|
Samsung semiconductor
|
PD44165094BF5-E33-EQ3-A PD44165094BF5-E35-EQ3 PD44 |
18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
PD46184184BF1-E40-EQ1 PD46185084BF1-E40-EQ1 PD4618 |
18M-BIT DDR II SRAM 4-WORD BURST OPERATION 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
AS5C2568 AS5C2568DJ-20_XT AS5C2568DJ-12_883C AS5C2 |
SRAM 32K x 8 SRAM SRAM MEMORY ARRAY SRAM 静态存储器
|
ETC AUSTIN[Austin Semiconductor] Electronic Theatre Controls, Inc.
|
CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|